Integrated structures

ABSTRACT

Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, vertically-stacked memory cells within the conductive levels, an insulative material over the stack and a select gate material over the insulative material. An opening extends through the select gate material, through the insulative material, and through the stack of alternating dielectric and conductive levels. A first region of the opening within the insulative material is wider along a cross-section than a second region of the opening within the select gate material, and is wider along the cross-section than a third region of the opening within the stack of alternating dielectric levels and conductive levels. Channel material is within the opening and adjacent the insulative material, the select gate material and the memory cells. Some embodiments include methods of forming vertically-stacked memory cells.

TECHNICAL FIELD

Integrated structures and methods of forming vertically-stacked memorycells.

BACKGROUND

Memory provides data storage for electronic systems. Flash memory is onetype of memory, and has numerous uses in modern computers and devices.For instance, modern personal computers may have BIOS stored on a flashmemory chip. As another example, it is becoming increasingly common forcomputers and other devices to utilize flash memory in solid statedrives to replace conventional hard drives. As yet another example,flash memory is popular in wireless electronic devices because itenables manufacturers to support new communication protocols as theybecome standardized, and to provide the ability to remotely upgrade thedevices for enhanced features.

NAND may be a basic architecture of integrated flash memory. A NAND cellunit comprises at least one selecting device coupled in series to aserial combination of memory cells (with the serial combination commonlybeing referred to as a NAND string). NAND architecture may be configuredto comprise vertically-stacked memory cells. It is desired to developimproved NAND architecture, and improved methods of forming NANDarchitecture.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-14 are cross-sectional views of a semiconductor construction atprocess stages of an example embodiment method of forming integratedstructures.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, monolithic channel material is formed adjacent(i.e., along) a drain-side select gate (SGD), a source-side select gate(SGS) and memory cells during fabrication of vertical NAND strings.Formation of the monolithic channel material may be enabled throughutilization of an insulative material between the SGD and a verticalstack of memory cells, and through formation of a widened region of anopening extending through the insulative material relative to regions ofthe opening extending through the SGD and the memory cells. Exampleembodiments are described with reference to FIGS. 1-14.

Referring to FIG. 1, a semiconductor construction 10 is shown tocomprise a stack 15 of alternating first and second levels 18 and 20.The levels 18 may be dielectric, and the levels 20 may be conductive.The conductive levels 20 may comprise, for example, one or more ofvarious metals (for example, tungsten, titanium, etc.), metal-containingcompositions (for example, metal nitride, metal carbide, metal silicide,etc.), and conductively-doped semiconductor materials (for example,conductively-doped silicon, conductively-doped germanium, etc.). Forinstance, the conductive levels 20 may comprise n-type dopedpolycrystalline silicon (i.e., n-type doped polysilicon). The dielectriclevels 18 may comprise any suitable composition or combination ofcompositions; and may, for example, comprise silicon dioxide.

The levels 18 and 20 may be of any suitable thicknesses; and may, forexample, have thicknesses within a range of from about 10 nm to about300 nm. In some applications, the levels 18 may be thinner than thelevels 20. For instance, levels 18 may be about 20 nm thick and levels20 may be about 30 nm thick.

The conductive levels 20 may be utilized to pattern control gates offlash devices. In such applications, a vertical string of memory cells(such as, for example, a vertical NAND string of memory cells) may befabricated, with the number of memory cells in each string beingdetermined by the number of conductive levels 20. The stack may compriseany suitable number of conductive levels. For instance, the stack mayhave 8 conductive levels, 16 conductive levels, 32 conductive levels, 64conductive levels, etc.

The stack is over a select gate material 16, which is over an etchstopmaterial 14. In some embodiments, the select gate material 16 may besource-side select gate material (SGS material).

The SGS material 16 may comprise any suitable electrically conductivecomposition or combination of compositions; and may, for example,comprise p-type doped silicon and/or other suitable conductively-dopedsemiconductor material.

The etchstop material 14 may comprise, for example, one or more oxides;such as, for example, one or more of aluminum oxide, hafnium oxide, etc.

The etchstop material 14 is over a source material 13. The sourcematerial may comprise any suitable electrically conductive material; andmay, for example, comprise metal (e.g., copper, titanium, tungsten,etc.), metal-containing composition (e.g., metal carbide, metal nitride,metal silicide, etc.) and/or conductively-doped semiconductor material(e.g., conductively-doped silicon, conductively-doped germanium, etc.).

The source material 13 is supported by a base 12. A break is providedbetween the material 13 and the base 12 to indicate that there may beadditional materials and/or integrated circuit structures between thebase and the material 13.

The base 12 may comprise semiconductor material; and may, for example,comprise, consist essentially of, or consist of monocrystalline silicon.The base 12 may be referred to as a semiconductor substrate. The term“semiconductor substrate” means any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductor substrates described above. In someapplications, the base 12 may correspond to a semiconductor substratecontaining one or more materials associated with integrated circuitfabrication. Such materials may include, for example, one or more ofrefractory metal materials, barrier materials, diffusion materials,insulator materials, etc.

An insulative material 22 is over stack 15. The material 22 may compriseany suitable composition or combination of compositions; and may, forexample, comprise, consist essentially of, or consist of silicondioxide.

The insulative material 22 may be formed to any suitable thickness, andin some embodiments may be formed to a thickness of from about 50 nm toabout 150 nm.

The construction of FIG. 1 may be formed with any suitable processing.For instance, the materials 13, 14, 16, 18, 20 and 22 may be formed insequential order over base 12 using one or more of atomic layerdeposition (ALD), chemical vapor deposition (CVD), and physical vapordeposition (PVD) with appropriate deposition parameters and materials,and utilizing one or more process chambers.

Referring to FIG. 2, an opening 30 is formed to extend through materials16, 18, 20 and 22. The opening 30 extends to the etchstop material 14,and may even extend partially into such etchstop material. However, theopening does not extend entirely through the etchstop material. Theillustrated opening is an example, and a plurality of such openings maybe formed during fabrication of an integrated assembly (e.g., a NANDmemory array).

The opening 30 may be formed utilizing any suitable processing. Forinstance, a patterned mask (not shown) may be formed over material 22 todefine a location of opening 30, and then the opening may be extendedthrough the materials 16, 18, 20 and 22. The patterned mask may beremoved during and/or after extending opening 30 into one or more of thematerials 16, 18, 20 and 22. The patterned mask utilized to define theopening 30 may be any suitable mask, including, for example,photolithographically-patterned photoresist and/or a mask formedutilizing pitch-multiplication methodologies.

The opening 30 has sidewalls 31. The opening may be a closed shape whenviewed from above (for instance, a circle, ellipse, rectangle, square,etc.) so that the illustrated sidewalls 31 are part of a continuoussidewall that extends around such closed shape.

The opening 30 may be a high-aspect-ratio opening, and advantageouslyhas relatively straight sidewalls as shown. However, in someapplications the sidewalls may taper without detrimentally affectingsubsequent processing and device performance.

Referring to FIG. 3, cavities 40 are formed to extend into theconductive levels 20 along the sidewalls 31 of opening 30. Such cavitiesmay be formed with an isotropic etch selective for the material ofconductive levels 20 relative to the material of dielectric levels 18.In some embodiments, conductive levels 20 comprise conductively-dopedsilicon, dielectric levels 18 comprise silicon dioxide, and the cavities40 are formed utilizing tetramethylammonium hydroxide (TMAH).

The conductive material 16 below stack 15 is shown to be substantiallyresistant to the etch utilized to form cavities 40. In some embodiments,levels 20 comprise n-type doped silicon, conductive material 16comprises p-type doped silicon; and the conditions utilized to formcavities 40 are substantially selective for n-type doped siliconrelative to p-type doped silicon.

Referring to FIG. 4, exposed regions of conductive levels 20 and SGSmaterial 16 are oxidized to form oxides 42 and 44. In some embodiments,levels 20 and SGS material 16 comprise silicon, and oxides 42 and 44comprise silicon dioxide. The oxides 42 and 44 may be formed utilizingany suitable methodology, including, for example, in situ steamgeneration (ISSG).

A liner 45 is formed to extend adjacent (i.e., along) sidewalls 31 ofopening 30 and within the cavities 40. The liner 45 comprises linermaterial 46. Such liner material may be any suitable composition orcombination of compositions, and in some embodiments may comprise,consist essentially of, or consist of silicon nitride.

Referring to FIG. 5, insulative material 48 is formed over linermaterial 46, select gate material 50 is formed over insulative material48, and another insulative material 52 is formed over the select gatematerial. In some embodiments, material 50 may be drain-side select gate(SGD) material.

Insulative material 48 may comprise any suitable composition orcombination of compositions; and in some embodiments may comprise,consist essentially of, or consist of silicon dioxide. The insulativematerial 48 may be formed with any suitable processing, including, forexample, plasma-enhanced chemical vapor deposition (PECVD). Theinsulative material 48 is formed to cover the opening 30, but notentirely fill the opening 30. Accordingly, a remaining portion of theopening 30 remains under the insulative material 48. In the shownembodiment, the insulative material 48 extends partially into opening30, but does not extend to an uppermost level of stack 15. In otherembodiments, the insulative material 48 may have other configurations atthe processing stage of FIG. 5; and in some embodiments may be overopening 30 without extending into the opening.

The SGD material 50 may comprise any suitable composition or combinationof compositions; and in some embodiments may comprise, consistessentially of, or consist of conductively-doped silicon.

The insulative material 52 may comprise any suitable composition orcombination of compositions; and in some embodiments may comprise,consist essentially of, or consist of silicon nitride.

The insulative materials 22, 48 and 52 may be referred to as first,second and third insulative materials, respectively, to distinguish themfrom one another. Alternatively, in some embodiments materials 22, 46,48 and 52 may be referred to as first, second, third and fourthinsulative materials, respectively, to distinguish them from oneanother.

Referring to FIG. 6, an opening 54 is formed to extend through materials48, 50 and 52 to join with the first opening 30. Opening 54 may bereferred to as a second opening, and the openings 54 and 30 may betogether considered to form a third opening 56. The opening 54 may beformed with any suitable processing. For instance, in some embodiments afirst dry etch may be utilized to punch through materials 50 and 52, andthen a second wet etch (for instance, an etch utilizing hydrofluoricacid) may be utilized to extend the opening 54 through oxide material48. A mask (not shown) may be utilized to define a location of opening54, and such mask may be removed after formation of the opening.

The third opening 56 they be considered to have a first region 58 wherethe opening passes through material 48, a second region 60 where theopening passes through material 50, a third region 62 where the openingpasses through stack 15, and a fourth region 64 where the opening passesthrough SGS material 16. In the shown embodiment, the first region 58 iswider than the second, third and fourth regions 60, 62 and 64 along thecross-section of FIG. 6. Such may be beneficial during subsequentetching of materials within regions 62 and 64 of the opening (forinstance, etchings described below with reference to FIGS. 8, 11 and12). In some embodiments, there may be little benefit achieved utilizingthe widened region 58 of the opening 56, and in such embodiments theopening 56 may have a substantially constant width throughout all of theregions 58, 60, 62 and 64 (i.e., all of the regions 58, 60, 62 and 64may have about the same width along the cross-section section of FIG. 6as one another; with widths being “about the same as one another” ifvariation amongst the widths is less than or equal to about 2 nm). Inthe illustrated embodiment, widths W₃ and W₄ (i.e., the widths ofregions 62 and 64) are approximately identical to one another, and mayvary slightly from width W₂ (i.e., the width of region 60) due to thepresence of nitride 46 within regions 62 and 64.

In embodiments in which region 58 is wider than regions 60, 62 and 64 ofopening 56, any suitable dimensions may be utilized for the variousregions of the opening. For instance, in some embodiments region 58 mayhave a width W₁ along the cross-section of FIG. 6 of from about 60nanometers (nm) to about 75 nm; and regions 60, 62 and 64 may havewidths W₂, W₃ and W₄ within a range of from about 55 nm to about 65 nm.Accordingly, the first region 58 of opening 56 may be wider than thesecond, third and fourth regions 60, 62 and 64 by an amount within arange of from about 5 nm to about 20 nm. In some embodiments, the firstregion 58 of opening 56 may be wider than the second, third and fourthregions 60, 62 and 64 by an amount within a range of from about 3 nm toabout 25 nm.

Although regions 60, 62 and 64 are all illustrated to have about thesame widths as one another, in other embodiments at least one of theregions 60, 62 and 64 may have a substantially different width (i.e., awidth greater than about 2 nm different) relative to another of theregions 60, 62 and 64.

Referring to FIG. 7, oxide 66 and charge-storage material 68 are formedto extend into opening 56, and within cavities 40 (FIG. 6).

The oxide 66 may comprise any suitable composition or combination ofcompositions; and in some embodiments may comprise, consist essentiallyof, or consist of one or more of silicon dioxide, hafnium oxide,zirconium oxide, etc.

The charge-storage material 68 may comprise any suitable composition orcombination of compositions; and in some embodiments may comprisefloating gate material (for instance, doped or undoped silicon) orcharge-trapping material (for instance, silicon nitride, metal dots,etc.).

Referring to FIG. 8, materials 46, 66 and 68 are removed from thesidewall surfaces of opening 56, while leaving the materials 46, 66 and68 within cavities 40 (FIG. 6). The material 68 within the cavitiesforms charge-storage structures (for instance, floating gatestructures); the conductive levels 20 form control gate structuresadjacent the charge-storage structures; and the oxide 42, material 46and material 66 together form charge-blocking dielectric between thecharge-storage structures and the control gate structures. Theconductive levels 20, charge-storage structures, and charge-blockingdielectric together become memory cell structures 70 (only one of suchis labeled). A plurality of such memory cell structures are verticallystacked one atop another in the illustrated embodiment.

The opening 56 comprises the regions 58, 60, 62 and 64 described abovewith reference to FIG. 6; with region 58 being wider than regions 60, 62and 64.

Referring to FIG. 9, exposed surfaces of SGD material 50 andcharge-storage material 68 are oxidized to form regions 72 and 74. Insome embodiments, materials 50 and 68 comprise silicon, and accordinglyregions 72 and 74 may comprise, consist essentially of, or consist ofsilicon dioxide. The regions 74 may correspond to gate dielectric of thememory cell structures 70.

Although the oxide 44 adjacent (i.e., along) SGS material 16 is shownremaining unaltered at the processing stage of FIG. 9, in someembodiments the removal of materials 66 and 68 described above withreference to FIGS. 7 and 8 may remove some or all of oxide 44, and a newoxide may be formed adjacent the SGS material 16 during the formation ofoxides 72 and 74 at the processing stage of FIG. 9.

The opening 56 comprises the regions 58, 60, 62 and 64 described abovewith reference to FIG. 6; with region 58 being wider than regions 60, 62and 64. Such regions may have the dimensions described above withreference to FIG. 6.

Referring to FIG. 10, protective material 76 is formed adjacent (i.e.,along) sidewalls of opening 56. The protective material 76 is asacrificial material, and may comprise any suitable composition orcombination of compositions. For instance, in some embodiments theprotective material 76 may comprise one or more of silicon nitride,polysilicon, etc. The protective material 76 lines sidewalls of opening56, and leaves a bottom of the opening exposed. The protective material76 may be formed in the shown configuration with any suitablemethodology. For instance, the protective material may be formed bydepositing the protective material as a liner that extends along thebottom surface of opening 56, along the top surface of material 52, andalong the sidewall surfaces of opening 56; then an anisotropic etch ofthe protective material may be utilized to remove the protectivematerial from along the bottom of the opening and from over a top ofmaterial 52.

Referring to FIG. 11, an etch is utilized to punch through the etchstopmaterial 14 at the bottom of the opening 56, which extends the openingto the source material 13. In the shown embodiment, the etch hasextended only to an upper surface of the source material. In otherembodiments, the etch may penetrate partially into the source material.The etch may be followed by a cleaning step; and the etch and associatedcleaning step may widen the portion of opening 56 within material 14relative to other regions of the opening (as shown).

The protective material 76 protects the gate dielectric 74, oxide 44 andoxide 72 from being degraded by the etch conditions utilized to punchthrough the etchstop material 14.

Referring to FIG. 12, the protective liner material 76 (FIG. 10) isremoved. The remaining opening 56 comprises the regions 58, 60, 62 and64 described above with reference to FIG. 6; with region 58 being widerthan regions 60, 62 and 64.

Referring to FIG. 13, channel material 80 is deposited within opening56. The channel material may comprise any suitable composition orcombination of compositions; and in some embodiments may compriseappropriately-doped silicon.

The channel material 80 extends across all of the regions 58, 60, 62 and64 of opening 56; and forms a single monolithic channel materialextending adjacent (i.e., along) SGD material 50, SGS material 16,dielectric levels 18, and memory cell structures 70. The illustratedchannel material is a single layer which lines the sidewalls and bottomof opening 56 at the processing stage of FIG. 13. In other embodiments,the channel material may entirely fill the opening 56 at the processingstage of FIG. 13 rather than lining peripheral surfaces of such opening.

Conventional fabrication of vertical NAND may form channel materialalong gate dielectric in a separate processing step from the formationof channel material along the SGD material. Accordingly, the channelmaterial will not have the monolithic configuration of FIG. 13, butinstead will have two different structures which join one another; witha first of the structures being along the SGD material, and a second ofthe structures being along the memory cells. A problem with suchconventional configurations is that there may be poor electrical contactbetween the first and second channel material structures leading to poordevice performance; and/or there may be poor uniformity duringsemiconductor fabrication processes so that some devices have bettercontact between the first and second channel material structures thanother devices leading to undesired performance variation across a batchof devices, or across numerous batches of devices. The monolithicchannel material of FIG. 13 may alleviate or prevent such problems, andaccordingly processing described herein may reduce costs and improvequality as compared to conventional processes.

Referring to FIG. 14, opening 56 is filled with insulative material 82(e.g. silicon dioxide) and then construction 10 is subjected toplanarization (for example, chemical-mechanical polishing). Theplanarization forms a planarized upper surface 83 extending acrossmaterials 52, 80 and 82.

The construction of FIG. 14 is an integrated structure, and comprisesvertically-stacked memory cells 84 containing the memory cell structures70 in combination with the channel material 80. In some embodiments,such memory cells may be incorporated into a NAND memory array, and maybe considered to be a vertical string of memory cells.

The memory structures described above may be incorporated intoelectronic systems. Such electronic systems may be used in, for example,memory modules, device drivers, power modules, communication modems,processor modules, and application-specific modules, and may includemultilayer, multichip modules. The electronic systems may be any of abroad range of systems, such as, for example, cameras, wireless devices,displays, chip sets, set top boxes, games, lighting, vehicles, clocks,televisions, cell phones, personal computers, automobiles, industrialcontrol systems, aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

Both of the terms “dielectric” and “electrically insulative” may beutilized to describe materials having insulative electrical properties.The terms are considered synonymous in this disclosure. The utilizationof the term “dielectric” in some instances, and the term “electricallyinsulative” in other instances, may be to provide language variationwithin this disclosure to simplify antecedent basis within the claimsthat follow, and is not utilized to indicate any significant chemical orelectrical differences.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present. When a structureis referred to as being “connected” or “coupled” to another structure,it can be directly connected or coupled to the other structure, orintervening structures may be present. In contrast, when a structure isreferred to as being “directly connected” or “directly coupled” toanother structure, there are no intervening structures present.

Some embodiments include an integrated structure having a stack ofalternating dielectric levels and conductive levels, vertically-stackedmemory cells within the conductive levels, an insulative material overthe stack and a select gate material over the insulative material. Anopening extends through the select gate material, through the insulativematerial, and through the stack of alternating dielectric levels andconductive levels. A first region of the opening within the insulativematerial is wider along a cross-section than a second region of theopening within the select gate material, and is wider along thecross-section than a third region of the opening within the stack ofalternating dielectric levels and conductive levels. Channel material iswithin the opening and adjacent the insulative material, the select gatematerial and the memory cells.

Some embodiments include a method of forming vertically-stacked memorycells. A first insulative material is formed over a stack of alternatingdielectric levels and conductive levels. A first opening is formedthrough the first insulative material and through the stack ofalternating dielectric levels and conductive levels. Cavities are formedto extend into the conductive levels along sidewalls of the firstopening. A silicon nitride liner is formed within the first opening andextends into the cavities. A second insulative material is formed overthe silicon nitride liner and over the first insulative material. Thesecond insulative material covers the first opening and does not extenddownwardly into the first opening to an uppermost level of the stack. Aremaining portion of the first opening is beneath the second insulativematerial. Select gate material is formed over the second insulativematerial. A second opening is formed the through the select gatematerial and the second insulative material, and to the remainingportion of the first opening. The first and second openings join withone another and together form a third opening. After forming the thirdopening: charge-storage structures are formed within the cavities;regions of the silicon nitride liner not within the cavities areremoved; and channel material is formed within the third opening andadjacent the second insulative material, adjacent the select gatematerial, adjacent the dielectric levels of the stack, and adjacent thecharge-storage structures.

Some embodiments include a method of forming vertically-stacked memorycells. An opening is formed to extend through a select gate material,through an insulative material under the select gate material, andthrough a stack of alternating dielectric levels and conductive levelsunder the insulative material. The stack includes memory cells withinthe conductive levels. A first region of the opening within theinsulative material is wider along a cross-section than a second regionof the opening within the select gate material, and is wider along thecross-section than a third region of the opening within the stack ofalternating dielectric levels and conductive levels. Channel material isformed within the opening adjacent the insulative material, adjacent theselect gate material, adjacent the dielectric levels of the stack, andadjacent the memory cells.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

We claim:
 1. An integrated structure, comprising: a stack of alternatingdielectric levels and conductive levels; vertically-stacked memory cellswithin the conductive levels; an insulative material over the stack; aselect gate material over the insulative material; an opening extendingthrough the select gate material, through the insulative material, andthrough the stack of alternating dielectric levels and conductivelevels; a first region of the opening within the insulative materialbeing wider along a cross-section than a second region of the openingwithin the select gate material, and being wider along the cross-sectionthan a third region of the opening within the stack of alternatingdielectric levels and conductive levels; and channel material within theopening and adjacent the insulative material, the select gate materialand the memory cells; cavities extending into the conductive levels;charge-blocking dielectric and charge-storage structures within thecavities; gate dielectric along the charge-storage structures; andwherein the memory cells include the charge-blocking dielectric,charge-storage structures and gate dielectric.
 2. The integratedstructure of claim 1 wherein the insulative material comprises silicondioxide.
 3. The integrated structure of claim 1 wherein the select gatematerial is drain-side select gate material and comprisesconductively-doped silicon.
 4. The integrated structure of claim 1wherein the second and third regions of the opening are about a samewidth as one another along the cross-section.
 5. The integratedstructure of claim 1 wherein the first region is wider than the secondand third regions by an amount within a range of from about 3 nm toabout 25 nm.
 6. The integrated structure of claim 1 wherein the firstregion has a width along the cross-section within a range of from about60 nm to about 75 nm.
 7. The integrated structure of claim 6 wherein thesecond and third regions have widths along the cross-section within arange of from about 55 nm to about 65 nm.
 8. The integrated structure ofclaim 1 wherein the conductive levels comprise conductively-dopedsilicon and the dielectric levels comprise silicon dioxide.
 9. Theintegrated structure of claim 1 comprising silicon dioxide between theselect gate material and the channel material.
 10. The integratedstructure of claim 1 wherein the insulative material is a thirdinsulative material; wherein a first insulative material is over thestack, a second insulative material is over the first insulativematerial, and the third insulative material is over the secondinsulative material.
 11. The integrated structure of claim 10 whereinthe first, second and third insulative materials comprise silicondioxide, silicon nitride and silicon dioxide, respectively.
 12. Theintegrated structure of claim 1 wherein the opening extends through asource-side select gate material and to a conductive source material,and wherein the first region of the opening is wider than a fourthregion of the opening within the source-side select gate material alongthe cross-section.